Friday, 8 February 2013

[Q2]Calculate the equivalent oxide thickness(EOT) of the gate stack and the LaLuO3 oxide relative perimittivity(k)

According to Wikipedia, an Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to produce the same effect as the high-k material being used.
{EOT = t_{high-k} \left(\frac{k_{SiO_2}}{k_{high-k}}\right)}\,..........................................................(1)
The EOT definition is useful to quickly compare different dielectric materials to the industry standard silicon oxide dielectric, as:
\epsilon_0 \epsilon_{SiO_2} \frac{A}{EOT} = \epsilon_0 \epsilon_{high-k} \frac{A}{t_{ox}} = C\,............................................(2)
 
Use the equation (2),  EOT = 2.876nm, and k=9.48.
The value of EOT is quiet reasonable, while k is much smaller than theory (k should be around 32).
Please live message about how to calculate k.
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2 comments:

  1. Unknown8 February 2013 at 05:57

    Recounding to the material supervisor gave us, the k is supposed to be 8.726. However, I think the result of my caculate is also wrong XD.

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  2. mamundevidfb21 September 2016 at 13:22



    This will lengthen the life of your film thickness considerably.
    film thickness is an excellent greenhouse covering.
    For information: n&k

    ReplyDelete

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